View ADN2882_701464.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Preliminary Technical Data
FEATURES
Technology: high performance SiGe Bandwidth: 3.2 GHz minimum Input noise current density: 10 pAHz Optical sensitivity: -22 dBm Differential transimpedance: 4000 V/A Power dissipation: 75 mW Differential output swing: 250 mV p-p Input current overload: +3.25 dBm Output resistance: 50 side RSSI voltage and current ratio: 0.8V/mA Low-freq cutoff: 15 kHz On-chip PD filter: RF = 200 CF = 20 pF Die size: 0.7 mm x 1.2 mm
4.25 Gbps 3.3V Low Noise Transimpedance Amplifier ADN2882
PRODUCT DESCRIPTION
The ADN2882 is a compact, high performance 3.3 V power supply SiGe transimpedance amplifier (TIA) optimized for small form factor 4.25 Gbps metro-access, Ethernet PIN/APDTIA modules and 1x/2x/4x Fibre channel receiver applications and meets OC48 SR/IR sensitivity requirements. The ADN2882 is a single-chip solution for detecting photodiode current with a differential output voltage. The ADN2882 features low input referred noise current of 600 nA enabling -22 dBm sensitivity; 3.2 GHz minimum bandwidth enables up to 4.25 Gbps operation; +3.25 dBm nominal operation at 10dB extinction ratio. RSSI output signal proportional to average input current is available for monitoring and alarm generation. To facilitate assembly in small form factor packages such as a TO-46 or TO56 header, the ADN2882 integrates the photodiode filter network on chip and features 15 kHz low frequency cutoff without any external components. The ADN2882 chip area is less than 1 mm2, operates with a 3.3 V power supply and is available in die form.
APPLICATIONS
4.25 Gbps optical modules SFF-8472 compliant receivers PIN/APD-TIA receive optical subassembly SONET/GbE/FC optical receivers, transceivers, transponders
FUNCTIONAL BLOCK DIAGRAM
3.3V VCC_FI LT ER 200 FI LT ER IN VCC 50 50 OU T OU T B
1100
20pF 0.85V 5mA
RSSI
GN D GN D CAP
Figure 1. ADN2882 Block Diagram
Rev. PrD
November
04
2004
Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 www.analog.com Fax: 781.326.8703 (c) 2004 Analog Devices, Inc. All rights reserved.
ADN2882 TABLE OF CONTENTS
Electrical Specifications ................................................................... 3 Absolute Maximum Ratings............................................................ 4 ESD Caution.................................................................................. 4 Pad Description ................................................................................ 5
Preliminary Technical Data
Pad Layout ..........................................................................................6 Pad Coordinates ............................................................................6 Die Information.............................................................................6 Assembly Recommendations...........................................................7
REVISION HISTORY
07/04--Revision PrB July 27 2004 09/04 - Revision PrC Sept 30 2004: spec changes 11/04 - Revision PrD: RSSI added in
Rev. PrD Nov. 04 2004 | Page 2 of 10
Preliminary Technical Data ELECTRICAL SPECIFICATIONS
Table 1.
Parameter DYNAMIC PERFORMANCE Bandwidth (BW)2 Total Input RMS Noise (IRMS)2 Small Signal Transimpedance (ZT) Low Frequency Cutoff Output Return Loss Input Overload Current3 Maximum Output Swing Output Data Transition Time PSRR Group Delay Variation Transimpedance Ripple Total Jitter Deterministic Jitter Linear Output Range DC PERFORMANCE Power Dissipation Input Voltage Output Common Mode Voltage Output Impedance PD FILTER Resistance PD FILTER Capacitance RSSI Sensitivity RSSI Offset Conditions1 -3 dB DC to 4.0 GHz 100MHz IIN = 10A IIN = 500A DC to 4.25GHz, differential Pavg pk-pk diff, IIN,PK- PK = 2.0 mA 20% to 80% rise/fall time IIN,PK- PK = 2.5 mA <10 MHz 50 MHz to 1.0 GHz 50 MHz to 1.0 GHz 10 A < IIN,PK- PK 100 A 100 A < IIN,PK- PK 2.0 A 10 A < IIN,PK- PK 100 A 100 A < IIN,PK- PK 2.0 A Pk-pk, < 1dB compression Min 3.3 2800 Typ 3.8 520 3800 15 TBD -20 3.25 250 40 -40 TBD TBD TBD TBD 2 4 TBD Max
ADN2882
Unit GHz nA V/A kHz kHz dB dBm mV ps dB ps dB ps ps ps Ps mV
TBD 4800
-12 350
TBD 180
TBD TBD
IIN,AVE = 0 DC terminated to VCC Single-ended RF CF IIN, AVE = 0 uA to 1 mA IIN, AVE = 0 uA
50
75 0.85 Vcc - 0.12 50 200 20 0.8 TBD
120
mW V V pF V/mA mV
1 2
Min/Max VCC = +3.3 V 0.3 V, Ta = -40C to +95C; Typ VCC = 3.3 V, Ta = +25C. Photodiode capacitance CD = 0.5pF 0.15pF, photodiode resistance = 5 . Load impedance = 50 (each output, ac-coupled). 3 10-10 BER, 10 dB ER,
Rev. PrD Nov. 04 2004 | Page 3 of 10
ADN2882 ABSOLUTE MAXIMUM RATINGS
Table 2.
Parameter Supply Voltage (VCC to GND) Maximum Input Current Storage Temperature Range Operating Ambient Temperature Range Maximum Junction Temperature Die Attach Temperature (<60 seconds) Rating 5V 10 mA -65C to +125C -40C to +95C 165C 450C
Preliminary Technical Data
Stresses above those listed under Absolute Maximum Rating may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ESD CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although this product features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
Rev. PrD Nov. 04 2004 | Page 4 of 10
Preliminary Technical Data PAD DESCRIPTION
ADN2882
B FI LT ER
RSSI
Table 3.
Pad No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 Pad Name GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC Function Ground (input return). Current input. Bond directly to PD anode. Test probe Pad. Leave floating. Filter Output Filter Output Ground. Voltage Output (provides average input current reading) Low Frequency setpoint. Connect with 1 nF capacitance to GND for < 15 kHz. Ground. Ground (output return). Negative Output. Drives 50 termination (ac or dc termination). Positive Output. Drives 50 termination (ac or dc termination). Ground (output return). Ground. Filter Supply. Connect to VCC to enable on-chip 200 , 20 pf Filter. 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor. 3.3 V positive Supply. Recommended bypass to GND is 200 pF RF capacitor.
Rev. PrD Nov. 04 2004 | Page 5 of 10
ADN2882 PAD LAYOUT
Preliminary Technical Data
B FI LT ER
RSSI
Figure 2.. Pad Layout
PAD COORDINATES
Table 4.
PAD # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 PAD GND IN TEST FILTER FILTER GND RSSI CAP GND GND OUTB OUT GND GND VCCFILTER VCC VCC X (um) -500 -500 -500 -500 -500 -350 -200 -50 130 500 350 350 500 130 -50 -200 -350 Y (um) 260 130 10 -120 -260 -260 -260 -260 -260 -260 -60 60 260 260 260 260 260
DIE INFORMATION
Die Size
0.7mm x 1.2mm (edge-edge including 1mil scribe)
Die Thickness
10mils = 0.25mm
Passivation Openings
0.075 mm x 0.075 mm (pads 1-8, 9, 10, 13, 15, 16, 17) 0.144mm x 0.075mm (pads 9, 11, 12, 14)
Passivation Composition
5000A Si3N4 (top) +5000 A SiO2 (bot)
Pad Composition
Al/1%Cu
Backside Contact
Rev. PrD Nov. 04 2004 | Page 6 of 10
Preliminary Technical Data ASSEMBLY RECOMMENDATIONS
ADN2882
VPD
VCC
560pF 200pF
OUTB
OUT
Figure 3. 5-Pin TO-46 with External Photodiode Supply VPD
1x Vendor-Specific (0.3 mm x 0.3 mm) 4.25 Gbps Photo Diode 1x ADN2882 (0.7 mm x 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier 1x 200 pF RF single-layer capacitor 1x 560pF RF Single-layer capacitor
Notes Minimize all GND bond wire lengths Minimize IN, OUT and OUTB bond wire lengths Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrD Nov. 04 2004 | Page 7 of 10
ADN2882 ASSEMBLY RECOMMENDATIONS
Preliminary Technical Data
VCC
200pF
OUTB
Ceramic Standoff
OUT
Figure 4. Recommended Layout for 4 pin TO-46
1x Vendor-Specific (0.3 mm x 0.3 mm) 4.25 Gbps Photo Diode 1x ADN2882 (0.7 mm x 1.2 mm) Analog Devices SiGe 4.25 Gbps Transimpedance Amplifier 1x 200 pF RF single-layer capacitor 1x ceramic standoff
Notes Minimize all GND bond wire lengths Minimize IN, OUT and OUTB bond wire lengths Maintain symmetry between IN and OUT/OUTB bond wires
Rev. PrD Nov. 04 2004 | Page 8 of 10
Preliminary Technical Data TYPICAL SIGNAL PERFORMANCE
ADN2882
Rev. PrD Nov. 04 2004 | Page 9 of 10
ADN2882 ORDERING GUIDE
Model ADN2882XCHIPS-WP Temperature -40 C to 95 C
o o
Preliminary Technical Data
Package Description NA Package Option Tested Die
Rev. PrD Nov. 04 2004 | Page 10 of 10
PR04946-0-11/04(PrD)
This datasheet has been download from: www..com Datasheets for electronics components.

▲Up To Search▲

Price & Availability of ADN2882

	To Download ADN2882 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .